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Capacitance voltage measurements of Si-SiOand Si- Al2O3 structures before and after 3 MeV proton irradiation
KTH, School of Information and Communication Technology (ICT).
2016 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Electronic components, based on current semiconductor technologies operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon dioxide (SiO2) is often used as dielectric layer for semiconductor devices. In this study Si-SiO2 and Si-Al2O3 structures have been compared. These material combinations are exposed to 3 MeV proton irradiation and capacitance voltage (CV) measurements have been taken before and after irradiation with doses of 1010, 1011, 1012 and 1013 cm-2. The CV measurements reveal that dielectric constant of Al2O3 does not change very much compare with SiO2. Also as compared to Si-Al2O3, degradation in the flatband voltage and oxide charges extracted from CV-curves is more visible in the Si-SiO2 system. It indicates that Al2O3 is more resistant to ionizing radiation than SiO2.

Place, publisher, year, edition, pages
2016. , 22 p.
Series
TRITA-ICT-EX, 2016:48
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-205295OAI: oai:DiVA.org:kth-205295DiVA: diva2:1088355
Subject / course
Engineering Physics
Educational program
Master of Science - Nanotechnology
Supervisors
Examiners
Available from: 2017-04-13 Created: 2017-04-12 Last updated: 2017-04-13Bibliographically approved

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  • apa
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