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Thermal conductivity of epitaxially grown InP: experiment and simulation
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics. Harvard Univ, USA.ORCID iD: 0000-0002-2069-2820
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics. IRnova AB, Sweden.
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2017 (English)In: CrystEngComm, ISSN 1466-8033, E-ISSN 1466-8033, Vol. 19, no 14, 1879-1887 p.Article in journal (Refereed) Published
Abstract [en]

The integration of III-V optoelectronic devices on silicon is confronted with the challenge of heat dissipation for reliable and stable operation. A thorough understanding and characterization of thermal transport is paramount for improved designs of, for example, viable III-V light sources on silicon. In this work, the thermal conductivity of heteroepitaxial laterally overgrown InP layers on silicon is experimentally investigated using microRaman thermometry. By examining InP mesa-like structures grown from trenches defined by a SiO2 mask, we found that the thermal conductivity decreases by about one third, compared to the bulk thermal conductivity of InP, with decreasing width from 400 to 250 nm. The high thermal conductivity of InP grown from 400 nm trenches was attributed to the lower defect density as the InP micro crystal becomes thicker. In this case, the thermal transport is dominated by phonon-phonon interactions as in a low defect-density monocrystalline bulk material, whereas for thinner InP layers grown from narrower trenches, the heat transfer is dominated by phonon scattering at the extended defects and InP/SiO2 interface. In addition to the nominally undoped sample, sulfur-doped (1 x 10(18) cm(-3)) InP grown on Si was also studied. For the narrower doped InP microcrystals, the thermal conductivity decreased by a factor of two compared to the bulk value. Sources of errors in the thermal conductivity measurements are discussed. The experimental temperature rise was successfully simulated by the heat diffusion equation using the FEM.

Place, publisher, year, edition, pages
ROYAL SOC CHEMISTRY , 2017. Vol. 19, no 14, 1879-1887 p.
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Chemical Sciences
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URN: urn:nbn:se:kth:diva-206248DOI: 10.1039/c6ce02642gISI: 000398401800004Scopus ID: 2-s2.0-85017004050OAI: oai:DiVA.org:kth-206248DiVA: diva2:1095345
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QC 20170512

Available from: 2017-05-12 Created: 2017-05-12 Last updated: 2017-05-19Bibliographically approved

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