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Group-IV (Si, Ge, and Sn)-doped AgAlTe2 for intermediate band solar cell from first-principles study
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2017 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, no 6, p. 065007-065014, article id 065007Article in journal (Refereed) Published
Abstract [en]

Earlier studies of chalcopyrites as the absorber for intermediate band solar cells (IBSCs) mainly focused on Cu-based compounds, whose intermediate band is usually empty due to its intrinsic p-type conductivity. This is not beneficial to the two sub-bandgap absorptions. In this paper, we demonstrate that the intermediate bands in group IV (Si, Ge, and Sn) doped AgAlTe2 are delocalized and mainly contributed by the anti-bonding state of group-IV elements s state and Te-p state. Overall, we suggest that Sn-doped AgAlTe2 should be a promising absorber candidate for IBSCs based on the theoretical efficiency and defect stability.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2017. Vol. 32, no 6, p. 065007-065014, article id 065007
Keywords [en]
intermediate band solar cell, first-principles calculation, electronic structure, defect formation energy, AgAlTe2
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-207615DOI: 10.1088/1361-6641/aa67d7ISI: 000408688400001Scopus ID: 2-s2.0-85019582549OAI: oai:DiVA.org:kth-207615DiVA, id: diva2:1097307
Note

QC 20170523

Available from: 2017-05-22 Created: 2017-05-22 Last updated: 2017-09-26Bibliographically approved

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