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Rapid thermal annealing treated spin-on doped antireflective radial junction Si nanopillar solar cell
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0003-1806-9148
2017 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 25, no 8, A200-A207 p.Article in journal (Refereed) Published
Abstract [en]

Radial junction nanopillar Si solar cells are interesting for cost effective efficiency improvement. Here, we address a convenient top-down fabrication of Si nanopillar solar cells using spin-on doping and rapid thermal annealing (RTA) for conformal PN junction formation. Broadband suppressed reflection as low as an average of 5% in the 300-1100 nm wavelength range and un-optimized cell efficiency of 7.3% are achieved. The solar cell performance can be improved by optimization of spin-on-doping and suitable surface passivation. Overall, the all RTA processed, spin-on doped nanopillar radial junction solar cell shows a very promising route for low cost and high efficiency thin film solar cell perspectives.

Place, publisher, year, edition, pages
Optical Society of America, 2017. Vol. 25, no 8, A200-A207 p.
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-207906DOI: 10.1364/OE.25.00A200ISI: 000400665200001PubMedID: 28437915ScopusID: 2-s2.0-85018502583OAI: oai:DiVA.org:kth-207906DiVA: diva2:1103612
Note

QC 20170530

Available from: 2017-05-30 Created: 2017-05-30 Last updated: 2017-05-30Bibliographically approved

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Dev Choudhury, BikashAnand, Srinivasan
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