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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
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2017 (English)In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 12, article id 306Article in journal (Refereed) Published
Abstract [en]

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH4 is superior to that of devices featuring ALD W using B2H6. This disparity in device performance results from different metal gate-induced strain from ALD W using SiH4 and B2H6 precursors, i.e. tensile stresses for SiH4 (similar to 2.4 GPa) and for B2H6 (similar to 0.9 GPa).

Place, publisher, year, edition, pages
SPRINGER , 2017. Vol. 12, article id 306
Keywords [en]
ALD W, High-k and metal gate (HKMG), Nano-beam diffraction (NBD), Threshold voltage (V-t), Mobility
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-207672DOI: 10.1186/s11671-017-2080-2ISI: 000400179500009PubMedID: 28449546Scopus ID: 2-s2.0-85018869577OAI: oai:DiVA.org:kth-207672DiVA, id: diva2:1104898
Note

QC 20170602

Available from: 2017-06-02 Created: 2017-06-02 Last updated: 2017-06-02Bibliographically approved

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Radamson, Henry H.

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