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Bipolar integrated circuits in SiC for extreme environment operation
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
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2017 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 32, no 3, 034002Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2017. Vol. 32, no 3, 034002
Keyword [en]
bipolar technology, high temperature, integrated circuit, radiation hardness, SiC
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-208111DOI: 10.1088/1361-6641/aa59a7ScopusID: 2-s2.0-85014543151OAI: oai:DiVA.org:kth-208111DiVA: diva2:1106269
Note

QC 20170607

Available from: 2017-06-07 Created: 2017-06-07 Last updated: 2017-06-07Bibliographically approved

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Zetterling, Carl-MikaelHallén, AndersHedayati, RahelehKargarrazi, SalehLanni, LuigiaMalm, B. GunnarRusu, AnaSuvanam, Sethu SavedaTian, YeÖstling, Mikael
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Integrated devices and circuits
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CiteExportLink to record
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Citation style
  • apa
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Output format
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