This paper reports the first RF-MEMS component in OSTE polymer. Three OSTE-based ridge gap resonators were fabricated by direct, high aspect ratio, photostructuring. The OSTE polymer's good adhesion to gold makes it suitable for RF-MEMS applications. The OSTE ridge gap resonators differ in how they were coated with gold. The OSTE-based devices are compared to each other as well as to Si-based, SU8-based, and CNT-based devices of equal design. The OSTE-based process was performed outside the cleanroom, and with a fast fabrication process (∼1 h). The OSTE-based device performance is on par with that of the other alternatives in terms of frequency, attenuation, and Q-factor.