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Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs
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2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 6, 2611-2616 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents a numerical simulation study investigating the effect of buried oxide on surface roughness scattering limited hole mobility (mu(SR)) in ultrathin germanium-on-insulator (GeOI) MOSFETs, for the first time. The simulation considers wave function penetration at channel/oxide interface and nonlinear dependence of scattering matrix element on surface fluctuation. Three types of buried oxide materials are compared (GeO2, SiO2, and Si3N4). The mu(SR) increases in the order of SiO2 < GeO2 < Si3N4. This dependence of mu(SR) on buried oxide material is due to surface fluctuation scattering from backside Ge/buried oxide interface. Our simulation results show that Si3N4 and GeO2 are beneficial as buried oxide for mobility enhancement in GeOI MOSFETs, compared with conventional SiO2 as buried oxide. Our findings provide an insight into further improving mobility characteristic.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, no 6, 2611-2616 p.
Keyword [en]
Buried oxide, germanium-on-insulator (GeOI) MOSFET, mobility, surface roughness scattering
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-209065DOI: 10.1109/TED.2017.2688489ISI: 000402057100021Scopus ID: 2-s2.0-85018520478OAI: oai:DiVA.org:kth-209065DiVA: diva2:1112182
Note

QC 20170620

Available from: 2017-06-20 Created: 2017-06-20 Last updated: 2017-06-20Bibliographically approved

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