Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Investigation of the structural, optical and electronic properties of Cu2Zn(Sn,Si/Ge)(S/Se)4 alloys for solar cell applications
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. University of Oslo, Norway.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering. University of Oslo, Norway.
2017 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 254, no 6, e201700084Article in journal (Refereed) Published
Abstract [en]

The crystalline structural, electronic and optical properties of the alloys Cu2ZnSn1−xGexS4, Cu2ZnSn1−xSixS4, Cu2ZnSn1−xGexSe4 and Cu2ZnSn1−xSixSe4 are calculated by first-principles using both the generalized gradient approximation and a hybrid functional approach. We find that the electronic band structures are qualitatively very similar for these alloys. The band-gap energy Eg(x) (for x = 0, 0.125, 0.25, 0.5, 0.75, 0.875 and 1) increases almost linearly with Ge and Si substitution. However, for very Si rich Cu2ZnSn1−xSixS4 alloys (but not for Cu2ZnSn1−xSixSe4) there is an abrupt increase of Eg(x) for x > 0.96. We therefore analyse this effect by calculating the electronic structures for x = 0.93, 0.96 and 1. We find that the Sn-like states form localised density-of-states below the conduction band edge in Cu2ZnSn1−xSixS4, while corresponding states resonate more with the conduction bands in Cu2ZnSn1−xSixSe4. The effect in S-based alloys is a direct consequence of the energetically high conduction band edge for Cu2ZnSiS4 in combination with energetically low Sn-like states. Furthermore, the calculated dielectric constants are relatively similar for all alloy configurations. Overall however, our results suggest that it is possible to use Si and Ge as alloying element in quaternary Cu2ZnSnS4 to improve the photovoltaic properties.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2017. Vol. 254, no 6, e201700084
Keyword [en]
alloys, band gap, first-principles calculations, kesterites
National Category
Other Physics Topics
Identifiers
URN: urn:nbn:se:kth:diva-209892DOI: 10.1002/pssb.201700084ISI: 000403292300007Scopus ID: 2-s2.0-85020424311OAI: oai:DiVA.org:kth-209892DiVA: diva2:1115613
Note

QC 20170627

Available from: 2017-06-27 Created: 2017-06-27 Last updated: 2017-06-30Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Chen, Rongzhen
By organisation
Materials Science and Engineering
In the same journal
Physica status solidi. B, Basic research
Other Physics Topics

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 1 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf