Silicon nanofabrication by electron beam lithography and laser-assisted electrochemical size-reduction
2002 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 61-62, 563-568 p.Article in journal (Refereed) Published
Laser-assisted electrochemical size-reduction has been carried out on silicon nanostructures produced by electron beam lithography and reactive ion etching. We demonstrate the ability to reduce nanopillars down to 10 nm diameter while preserving shape, but also the possibility of preferential etching of different parts of the pillar by varying the applied bias voltage. Furthermore, the origin of the carriers responsible for the etching is discussed, and we note the presence of a 'dark' etching mechanism working in parallel with the normal dissolution reaction. Finally, the etching of shallow Si dots on a Si surface shows further localization of etching, with a different etching reaction taking place in the vicinity of the structures as opposed to the planar surface, far from the structures.
Place, publisher, year, edition, pages
2002. Vol. 61-62, 563-568 p.
electrochemical etching, laser-assisted etching, size-reduction, silicon nanofabrication, nanostructures
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-6473DOI: 10.1016/S0167-9317(02)00532-4ISI: 000176594700077OAI: oai:DiVA.org:kth-6473DiVA: diva2:11195
QC 201011012005-09-152005-09-152010-11-01Bibliographically approved