Size-reduced silicon nanowires: Fabrication and electrical characterization
2005 (English)In: Materials science & engineering. C, biomimetic materials, sensors and systems, ISSN 0928-4931, Vol. 25, no 5-8, 733-737 p.Article in journal (Refereed) Published
Silicon nanowires of diameters down to 100 nm and typical lengths of 1-3 μm have been fabricated in silicon-on-insulator material by electron beam lithography and plasma etching. They were subsequently size-reduced by photoelectrochemical etching resulting in wire widths down to 10 nm. To enable accurate control of the photoelectrochemical size-reduction, a micro-electrochemical cell was developed, enabling single nanowires to be exposed to the etching solution while being illuminated by a laser or a lamp. The arrangement allows contact leads to be extended to metal contact pads located outside the cell, which can be connected by probes, allowing in situ electrical characterization of a nanowire during etching. In this paper, we describe the experimental setup, the fabrication method and show examples of achieved wire widths together with some preliminary results from the electrical characterization.
Place, publisher, year, edition, pages
2005. Vol. 25, no 5-8, 733-737 p.
Electrochemical etching of silicon, Electron beam lithography, Hydrofluoric acid, Micro-electrochemical cell, Silicon nanowires, Size-reduction
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-6474DOI: 10.1016/j.msec.2005.06.036ISI: 000233784800038ScopusID: 2-s2.0-27744488489OAI: oai:DiVA.org:kth-6474DiVA: diva2:11196
QC 20100929. Uppdaterad från In press till Published (20100929).2005-09-152005-09-152010-09-29Bibliographically approved