Controlled Fabrication of Silicon Nanowires by Electron Beam Lithography and Electrochemical Size Reduction
2005 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 5, no 2, 275-280 p.Article in journal (Refereed) Published
We demonstrate that electrochemical size reduction can be used for precisely controlled fabrication of silicon nanowires of widths approaching the 10 nm regime. The scheme can, in principle, be applied to wires defined by optical lithography but is here demonstrated for wires of similar to100-200 nm width, defined by electron beam lithography. As for electrochemical etching of bulk silicon, the etching can be tuned both to the pore formation regime as well as to electropolishing. By in-situ optical and electrical characterization, the process can be halted at a certain nanowire width. Further electrical characterization shows a conductance decreasing faster than dimensional scaling would predict. As an explanation, we propose that charged surface states play a more pronounced role as the nanowire cross-sectional dimensions decrease.
Place, publisher, year, edition, pages
2005. Vol. 5, no 2, 275-280 p.
Electric conductivity; Electrochemistry; Electrolytic polishing; Electron beam lithography; Etching; Morphology; Photolithography; Silicon; Charged surface states; Electrochemical etching; Electrochemical size reduction; Silicon nanowires
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-6476DOI: 10.1021/nl0481573ISI: 000227100500015ScopusID: 2-s2.0-14644409706OAI: oai:DiVA.org:kth-6476DiVA: diva2:11198
QC 201007192005-09-152005-09-152010-07-19Bibliographically approved