Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
KTH, School of Information and Communication Technology (ICT), Electronics.
KTH, School of Information and Communication Technology (ICT), Electronics.
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0001-8108-2631
2017 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 46, no 7, p. 4478-4484Article in journal (Refereed) Published
Abstract [en]

4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Place, publisher, year, edition, pages
SPRINGER , 2017. Vol. 46, no 7, p. 4478-4484
Keywords [en]
Ferroelectric, high temperature (HT), memory device, silicon carbide (4H-SiC), thin film, vanadium-doped bismuth titanate (BiTV)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-210461DOI: 10.1007/s11664-017-5447-3ISI: 000403016800089Scopus ID: 2-s2.0-85015704004OAI: oai:DiVA.org:kth-210461DiVA, id: diva2:1120481
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20170706

Available from: 2017-07-06 Created: 2017-07-06 Last updated: 2019-04-29Bibliographically approved
In thesis
1. SiC CMOS and memory devices for high-temperature integrated circuits
Open this publication in new window or tab >>SiC CMOS and memory devices for high-temperature integrated circuits
2019 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. Silicon carbide (4H-SiC) integrated circuits target high-temperature electronics, although the current integration level is low due to immature process technology and non-volatile memory has not been demonstrated. SiC CMOS would allow highly dense integrated circuits for microcontrollers and random access memory (RAM). Ferroelectric capacitors could serve as high-temperature non-volatile memory devices.

In this work, significant efforts have been taken to develop a SiC CMOS process and ferroelectric capacitors. SiC CMOS is challenging and mostly unexplored technology. A recessed channel transistor design was investigated. Several key challenges in the SiC CMOS process was identified, leading to a polyoxide-based field oxide, a deposited gate-dielectric process, reproducible Ni-Al semi-salicide contacts to p-type SiC, and a high-temperature CMP enabled two-level TiW-based metallisation. Self-aligned cobalt silicide contacts were investigated, and was found to produce low-resistance ohmic contactsto n-type SiC. Inverters and ring oscillators that operate at 200 °C were achieved in this recessed channel SiC CMOS process. It was found that steam-treating the gate oxide interface produced both NMOS and PMOS transistors that could be used for circuits. However, the reliability suffered due to poor PMOS performance. Wafer-level statistical measurements of interface trap density was performed on NMOS transistors treated by steam, dry oxygen and nitrided by nitrous oxide. A deposition and etch process for ferroelectric capacitors, using vanadium-doped bismuth titanate as ferroelectric material, was developed. High-temperature operation was demonstrated, and several scalability challenges for the etched process was identified.

The implication of this thesis is that while operational recessed channel SiC CMOS was demonstrated at high temperature, more promising technologies like ion implanted bulk transistors should be investigated instead, due to the numerous difficulties in optimising both NMOS and PMOS with this recessed channel design. The presented recessed channel process technology can be used to fabricate short channel length NMOS-logic. Ferroelectric capacitors is a good candidate for high-temperature non-volatile memory applications, although more work is needed in the CMOS integration.

Abstract [sv]

Högtemperaturelektronik används i extrema miljöer, såsom borrhålsloggning för geotermisk energiutvinning, inuti högtemperaturturbiner, industrigassensorer och rymdelektronik. De enklaste systemen använder sig av en sensor och en radio, men mer komplicerade system använder sig dessutom av en mikrokontroller med minne. Integrerade kretsar i kiselkarbidsteknik (4H-SiC) är lämpade för högtemperaturelektronik, men den nuvarande integrationsnivån är låg p.g.a. den nuvarande omogna processtekniken. Icke-flyktiga minnen för högtemperaturtillämpningar har inte demonstrerats. CMOS-elektronik i kiselkarbidsteknik (SiC CMOS) skulle möjliggöra mikrokontroller och direktminne (eng. random access memory, RAM) tack vare den höga integrationstätheten. Ferroelektriska kondensatorer kan fungera som icke-flyktiga minneskomponenter för högtemperaturtillämpningar.

Denna avhandling presenterar ett omfattande utvecklingsarbete av SiC CMOS och ferroelektriska kondensatorer. SiC CMOS är en utmanande och till stor del outforskad teknologi. En recessad kanal transistordesign undersöktes. Några nyckelutmaningar identifierades för SiC CMOS processen. Dessa utmaningarresulterade i en polyoxidbaserad fältoxid, en deponerad grinddielektrikumprocess, reproducerbara Ni-Al halv-självlinjerade kontakter till p-typ kiselkarbid, och en högtemperatur CMP-möjliggjord tvånivås titanvolframbaserad metallisering. En självlinjerad koboltsilicid-kontaktprocess undersöktes, och det visade sig att den gav lågresistiva ohmska kontakter till n-typ kiselkarbid. Inverterare och ringoscillatorer som fungerar vid 200 °C kunde demonstreras med denna recessad kanal transistordesign. Ångbehandlad grindoxidgränssnitt ger fungerande NMOS- och PMOS-transistorer som kunde användas för CMOS kretsar. Dock så led pålitligheten hos CMOS kretsarna p.g.a. PMOS transistorernas låga prestanda. Statistisk mätning av gränssnittsfälltäthet på skivnivå genomfördes för NMOS transistorer som hade blivit behandlade med ånga, torr syrgas och nitriderade via lustgas. En deponering- och etsprocess för tillverkning av ferroelektriska kondensatorer, där det ferroelektriska materialet var vanadiumdopat vismuttitanat, togs fram. Högtemperaturfunktionalitet påvisades, och flera nedskalningsutmaningar hos den etsade processen identifierades.

Trots att den recessade kanal SiC CMOS processen var bra nog för att demonstrera högtemperaturkretsar, så visar resultatet av denna avhandling att det kan finnas bättre alternativ till denna process. Inneboende processutmaningari transistordesignen i sig gör det svårt att optimera NMOS och PMOS transistorer som är bra nog för CMOS. Jonimplanterade bulktransistorer är mer lovande. Den utvecklade processen kan användas för att tillverka NMOS-logik med kortkanalstransistorer. Ferroelektriska kondensatorer är en lämplig kandidat som icke-flyktigt minne för högtemperaturtillämpningar, men mer arbete krävs för CMOS-integration.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2019. p. 241
Series
TRITA-EECS-AVL ; 2019:42
Keywords
bismuth titanate (Bi4Ti3O12), CMOS, ferroelectric capacitor, field oxide, inverter, metallisation, metal oxide semiconductor field effect transistor (MOSFET), ohmic contacts, ring oscillator, semiconductor processing, silicon carbide (4H-SiC), CMOS, ferroelektrisk kondensator, fältoxid, halvledartillverkning, inverterare, kiselkarbid (4H-SiC), metallisering, MOSFET, ohmska kontakter, ringoscillator, vismuttitanat (Bi4Ti3O12)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-250276 (URN)978-91-7873-180-0 (ISBN)
Public defence
2019-05-24, Sal B, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
Knut and Alice Wallenberg Foundation, Working on VenusSwedish Foundation for Strategic Research , CMP Lab
Note

QC 20190428

Available from: 2019-04-29 Created: 2019-04-28 Last updated: 2019-04-29Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Ekström, MattiasÖstling, MikaelZetterling, Carl-Mikael

Search in DiVA

By author/editor
Ekström, MattiasKhartsev, SergiyÖstling, MikaelZetterling, Carl-Mikael
By organisation
Electronics
In the same journal
Journal of Electronic Materials
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 445 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf