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Electrical performance of directly attached SiC power MOSFET bare dies in a half-bridge configuration
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0003-0933-6945
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0002-1755-1365
Acreo Swedish ICT AB, Stockholm, Sweden.
2017 (English)In: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Taiwan: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 417-421, article id 7992074Conference paper, Published paper (Refereed)
Abstract [en]

The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover, the parasitic inductances at the input-terminal together with the Miller capacitance generate oscillations causing instability and additional losses. In order to eliminate the package parasitic inductance, four 1.2kV SiC-MOSFET bare dies, two in parallel in each position, were directly attached to a PCB sandwich designed as a half bridge. The obtained structure forms a planar power module. From ANSYS Q3D simulations it was found that the parasitic inductance between drain and source for each transistor in the proposed planar module could be reduced 92 % compared to a TO247 package. The planar module was also tested as a dc-dc converter. Switching waveforms from these experiments are also presented.

Place, publisher, year, edition, pages
Taiwan: Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 417-421, article id 7992074
Keywords [en]
SiC MOSTEF, bare die, low inductive circuit, fast switching, parasitic inductance, converter, planar Module
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-211510DOI: 10.1109/IFEEC.2017.7992074ISI: 000426696300073Scopus ID: 2-s2.0-85034023937ISBN: 978-1-5090-5157-1 (electronic)OAI: oai:DiVA.org:kth-211510DiVA, id: diva2:1129636
Conference
3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, Kaohsiung, Taiwan, 3 June 2017 through 7 June 2017
Note

QC 20170810

Available from: 2017-08-04 Created: 2017-08-04 Last updated: 2018-03-23Bibliographically approved

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Risseh, ArashNee, Hans-Peter

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