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Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
2017 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 122, no 2, article id 025701Article in journal (Refereed) Published
Abstract [en]

The carbon vacancy (V-C) is a prominent defect in as-grown 4H-SiC epitaxial layers for high power bipolar devices. V-C is electrically active with several deep levels in the bandgap, and it is an efficient "killer" of the minority carrier lifetime in n-type layers, limiting device performance. In this study, we provide new insight into the equilibration kinetics of the thermodynamic processes governing the V-C concentration and how these processes can be tailored. A slow cooling rate after heat treatment at similar to 2000 degrees C, typically employed to activate dopants in 4H-SiC, is shown to yield a strong reduction of the V-C concentration relative to that for a fast rate. Further, post-growth heat treatment of epitaxial layers has been conducted over a wide temperature range (800-1600 degrees C) under C-rich surface conditions. It is found that the thermodynamic equilibration of V-C at 1500 degrees C requires a duration less than 1 h resulting in a V-C concentration of only similar to 10(11) cm(-3), which is, indeed, beneficial for high voltage devices. In order to elucidate the physical processes controlling the equilibration of V-C, a defect kinetics model is put forward. The model assumes Frenkel pair generation, injection of carbon interstitials (C-i's) from the C-rich surface (followed by recombination with V-C's), and diffusion of V-C's towards the surface as the major processes during the equilibration, and it exhibits good quantitative agreement with experiment.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 122, no 2, article id 025701
National Category
Physical Sciences
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URN: urn:nbn:se:kth:diva-211608DOI: 10.1063/1.4991815ISI: 000405663800057Scopus ID: 2-s2.0-85024404894OAI: oai:DiVA.org:kth-211608DiVA, id: diva2:1130938
Note

QC 20170811

Available from: 2017-08-11 Created: 2017-08-11 Last updated: 2017-08-11Bibliographically approved

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Hallén, Anders

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