AgTaO3 and AgNbO3 thin films by pulsed laser deposition
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, no 2, 615-618 p.Article in journal (Refereed) Published
Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (00 1) Whereas on the sapphire r-cut substrate they are preferential (I 10) and (00 1) oriented. To characterize microwave films properties in the range from I to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/ cm) was about 4.6% at 20 GHz, loss tangent similar to 0.106 at 20 GHz, K-factor-tunability/tan delta from 49% @ 10 GHz to 33% at 40 GHz.
Place, publisher, year, edition, pages
2006. Vol. 515, no 2, 615-618 p.
ferroelectric ceramics, pulsed laser deposition, epitaxial silver tantalate niobate films, coplanar waveguides, voltage tunable microwave devices, scattering parameters measuremen
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-6581DOI: 10.1016/j.tsf.2005.12.213ISI: 000241220600056ScopusID: 2-s2.0-33748754029OAI: oai:DiVA.org:kth-6581DiVA: diva2:11331
QC 201008272006-12-122006-12-122011-09-28Bibliographically approved