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AgTa0.5Nb0.5O3 thin film coplanar waveguide microwave capacitors
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2005 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 77, 13-20 p.Article in journal (Refereed) Published
Abstract [en]

400 nm thick AgTa0.5Nb0.5O3 (ATN) films have been prepared by pulsed laser depositiontechnique on LaAlO3 (001) and sapphire (Al2O3-0112, r -cut) single crystal substrates.Comprehensive X-ray diffraction analysis showed epitaxial quality of ATN/LaAlO3films and preferentially (001) orientation of ATN/Al2O3 films. Voltage tunable microwavecapacitors were fabricated by lift-off technique on the surface of ferroelectricfilms. Microwave on-wafer tests were performed in the range from 1 to 40 GHz. Frequencydispersion is about 4.3%, voltage tunability is 4.7% @ 20 GHz and 200 kV/cm,loss tangent ∼0.068 @ 20 GHz, K-factor=tunability/tanδ is ranged from 124% @10 GHz to 35% @ 40 GHz.

Place, publisher, year, edition, pages
2005. Vol. 77, 13-20 p.
Keyword [en]
Coplanar waveguide, microwave on-wafer test, photolithography, pulsed laser deposition, scatering parameter measurements, ferroelectric thin films, silver tantalate niobates, voltage tunable device
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-6583DOI: 10.1080/10584580500413624ISI: 000234386100003Scopus ID: 2-s2.0-33645505627OAI: oai:DiVA.org:kth-6583DiVA: diva2:11333
Note
QC 20100906Available from: 2006-12-12 Created: 2006-12-12 Last updated: 2017-12-14Bibliographically approved
In thesis
1. Processing and On-Wafer Test of Ferroelectric Film Microwave Varactors
Open this publication in new window or tab >>Processing and On-Wafer Test of Ferroelectric Film Microwave Varactors
2006 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. Ferroelectric materials usually have high dielectric constant, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used to fabricate capacitors for electronic industry because of their high dielectric constant, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure and used for electrically tunable microwave integrated circuits. It is an important task to sinter highly tunable and low loss ferroelectrics, fabricate and test the properties of microwave ferroelectric components.

This thesis shows experimental results on growth, crystalline and microwave properties of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), and AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering techniques from stoichiometric high density ceramic NKN, ATN, ATO, ANO and BST targets onto LaAlO3 (LAO), Al2O3 (r-cut sapphire), Nd:YAlO3 single crystals and amorphous glass substrates. Advanced X-ray diffraction examinations showed NKN, ATN, BST films on LAO substrates grow epitaxially, whereas films on r-cut sapphire were found to be preferentially (00l) oriented.

Coplanar waveguide 2 µm finger gap interdigital capacitor (CPWIDC) structures were fabricated by photolithography process and metal lift-off technique. On-wafer tests up to 40 GHz were performed to characterize microwave properties of the ferromagnetic film CPWIDC devices. The measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field was applied to planar capacitors to measure tunability. Original de-embedding technique has been developed to calculate capacitance, loss tan δ, and tunability of varactors from the measured S-parameters.

NKN film interdigital capacitors on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ~ 0.13, K-factor = tunability/tan δ from 152% @ 10GHz to 46% @ 40GHz. The ATN/sapphire CPWIDCs showed the lowest dispersion ~ 4.3% in whole frequency range from 1 to 40 GHz, voltage tunability 4.7% @ 20GHz and 200 kV/cm, lowest loss tangent ~ 0.068 @ 20GHz, K-factor = tunability/tan δ ranged from 124% @ 10GHz to 35% @ 40GHz.

BST film CPWIDCs on sapphire showed frequency about 17%, the highest voltage tunability ~ 22.2%, loss tangent ~ 0.137 @ 20GHz, and K-factor = 281% @ 10GHz to 95% @ 40GHz.

Place, publisher, year, edition, pages
Stockholm: KTH, 2006. x, 74 p.
Series
Trita-ICT/MAP, 2006:3
Keyword
: ferroelectrics, sodium potassium niobates, silver tantalite niobate, barium strontium titanate, thin films, pulsed laser deposition, rf magnetron sputtering, coplanar waveguide, photolithography
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-4226 (URN)
Public defence
2006-12-15, Sal D, KTH-Forum, Isafjordsg. 39, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100906Available from: 2008-12-23 Created: 2008-12-23 Last updated: 2010-09-06Bibliographically approved
2. Novel tantalate-niobate films for microwaves
Open this publication in new window or tab >>Novel tantalate-niobate films for microwaves
2005 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, and electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies.

Ferroelectric materials usually have high dielectric constants, and their dielectric properties are temperature and electric field dependent. The change in permittivity as a function of electric field is the key to a wide range of applications. Ferroelectric materials can be used in fabrication capacitors for electronic industry because of their high dielectric constants, and this is important in the trend toward miniaturization and high functionality of electronic products. The simple tunable passive component based on ferroelectric films is a varactor which can be made as a planar structure, and electrically tunable microwave integrated circuits using ferroelectric thin films can be developed. Therefore, it is very important to characterize the dielectric constant and tunability of ferroelectric thin films.

This thesis shows experimental results for growth, crystalline properties and microwave characterization of Na0.5K0.5NbO3 (NKN), AgTa0.5Nb0.5O3 (ATN), Ba0.5Sr0.5TiO3 (BST) as well as AgTaO3 (ATO), AgNbO3 (ANO) thin films. The films were grown by Pulsed Laser Deposition (PLD) and rf-magnetron sputtering of a stoichiometric, high density, ceramic NKN, ATN, BST target onto single crystal LaAlO3(LAO), Al2O3 (sapphire), and Nd:YAlO3, and amorphous glass substrates. By x-ray diffractometry, NKN, ATN, BST films on LAO substrates were found to grow epitaxially, whereas films on r-cut sapphire substrates were found to be preferentially (00l) oriented.

Coplanar waveguide interdigital capacitor (CPWIDC) structures were fabricated by standard photolithography processing and metal lift-off technique. Microwave properties of the NKN/Sapphire and ATN/Sapphire with CPW structures were characterized using on-wafer microwave measurement technique. Measurement setup is composed of network analyzer, probe station, and microwave G-S-G probes. External electric field through the connection between network analyzer and power supply was applied to measure voltage tunability. Measured S-parameter were used for the calculation of capacitance, loss tanδ, tunability and K-factor.

The NKN films interdigital capacitors with 2 μm finger gap on Nd:YAlO3 showed superior performance compared to ATN in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40V, 200 kV/cm) was about 29%, loss tangent ∼ 0.13, K-factor = tunability/tanδ from 152% @ 10GHz to 46% @ 40GHz.

The microwave performance of ATN film CPWIDC with 2 μm finger gap on sapphire substrate in the microwave range from 1 to 40 GHz showed that frequency dispersion is about 4.3%, voltage tunability was 4.7% @ 20GHz and 200 kV/cm, loss tangent ∼ 0.068 @ 20GHz, K-factor = tunability/tanδ is ranged from 124% @ 10GHz to 35% @ 40GHz.

The BST films CPWIDC with 2μmfinger gap on Al2O3 substrate showed frequency dispersion of capacitance in the microwave range from 1 to 40 GHz about 17%, voltage tunability = 1 - C(40V)/C(0) ∼ 22.2%, loss tangent ∼ 0.137 @ 20GHz, and K-factor = tunability/tanδ from 281% @ 10GHz to 95% @ 40GHz.

Place, publisher, year, edition, pages
Stockholms: KTH, 2005. viii, 40 p.
Series
Trita-EKT, ISSN 1650-8599 ; 2005:4
Keyword
ferroelectrics, sodium potassium niobates, silver tantalate niobate, barium stronitium titanate
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-489 (URN)
Presentation
2005-10-28, C4, Electrum, 10:00
Opponent
Supervisors
Note
QC 20101207Available from: 2005-11-11 Created: 2005-11-11 Last updated: 2010-12-07Bibliographically approved

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