Na0.5K0.5NbO3 film microwave varactors
2004 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 66, 291-300 p.Article in journal (Refereed) Published
Na0.5K0.5NbO3 (NKN) and Pb(Zr 0.53Ti0.47)O3 (PZT) films have been grown by rf-magnetron sputtering and pulsed laser deposition techniques, correspondingly, on sapphire (Al2O3-0112, r-cut), quartz (Y + 36°-cut) and YAlO3 + 1%Nd(Nd:YAlO3-001) single crystal substrates with Interdigital Capacitor (IDC) of Coplanar Waveguide (CPW) structure. Photolithography and metal lift-off technique was used for processing of the tunable microwave capacitor. Microwave network analyzer with G-S-G Picoprobe and probe station performed microsvave measurement with external DC bias. NKN film interdigital capacitors on Nd:YAlO3 show superior performance in the microwave range from 1 to 40 GHz. Within this range, the voltage tunability (40 V, 200 kV/cm) was about 29%, loss tangent ∼0.13, K-factor from 152% @10 GHz to 46% @40 GHz, voltage independent Cp was about 230 fF, tan δp changes from 0.14 @ 10 GHz to 0.36 @40 GHz, real and imaginary part of interconnect impedance increases with frequency from 0.13 Ω@ 10 GHz to 0.50 Ω @40 GHz and from 1.9 Ω@10 GHz to 5.9 Ω @40 GHz respectively.
Place, publisher, year, edition, pages
2004. Vol. 66, 291-300 p.
Coplanar waveguide, Interdigital capacitor, Network analysis, Pulsed laser deposition, rf-magnetron sputtering, Thin ferroelectric NKN films
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-6584DOI: 10.1080/10584580490895752ISI: 000226089700031ScopusID: 2-s2.0-33646699867OAI: oai:DiVA.org:kth-6584DiVA: diva2:11334
QC 201009062006-12-122006-12-122010-12-07Bibliographically approved