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The impact of atomic layer depositions on high quality Ge/GeO2 interfaces fabricated by rapid thermal annealing in O2 ambient
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
2017 (English)In: 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 164-166, article id 7947553Conference paper (Refereed)
Abstract [en]

This work demonstrates high quality Ge/GeO2 interfaces fabricated by O2 RTA that are degraded by a good quality SiO2 layer deposited by ALD. However, neither O3 and H2O precursors commonly used during subsequent high-k ALDs nor Si precursor AP-LTO-330 do not degrade the interface. Thus Dit increase after SiO2 deposition is likely due to intermixing. Therefore, the effect of subsequent ALDs on the interface quality has to be considered while designing Ge-based gate stacks.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 164-166, article id 7947553
Keywords [en]
ALD, Dit, GeO2, Germanium, high-k, Deposition, Electron devices, Manufacture, Rapid thermal annealing, Silica, Gate stacks, GeO2, High quality, High- k, Interface quality, Atomic layer deposition
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-212115DOI: 10.1109/EDTM.2017.7947553Scopus ID: 2-s2.0-85021891351ISBN: 9781509046591 OAI: oai:DiVA.org:kth-212115DiVA, id: diva2:1133671
Conference
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 28 February 2017 through 2 March 2017
Note

QC 20170816

Available from: 2017-08-16 Created: 2017-08-16 Last updated: 2017-08-16Bibliographically approved

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Žurauskaite, LauraHellström, Per-ErikÖstling, Mikael
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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf