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Characterizing 3D floating gate NAND flash
KTH, School of Information and Communication Technology (ICT), Electronics.
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2017 (English)In: SIGMETRICS 2017 Abstracts - Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, Association for Computing Machinery (ACM), 2017, p. 31-32Conference paper (Refereed)
Abstract [en]

In this paper, we characterize a state-of-The-Art 3D oating gate NAND ash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various error patterns. We believe that through our work, novel 3D NAND ash-oriented designs can be developed to achieve better performance and reliability.

Place, publisher, year, edition, pages
Association for Computing Machinery (ACM), 2017. p. 31-32
Keywords [en]
Computer science, Computers, Measurements, Error patterns, Floating gates, Fpga platforms, NAND Flash, Performance and reliabilities, State of the art, NAND circuits
National Category
Computer Engineering
Identifiers
URN: urn:nbn:se:kth:diva-212130DOI: 10.1145/3078505.3078550Scopus ID: 2-s2.0-85021810535ISBN: 9781450350327 (print)OAI: oai:DiVA.org:kth-212130DiVA, id: diva2:1133682
Conference
2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017, University of Illinois Urbana-ChampaignUrbana-Champaign, United States, 5 June 2017 through 9 June 2017
Note

QC 20170816

Available from: 2017-08-16 Created: 2017-08-16 Last updated: 2018-01-13Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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Language
  • de-DE
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  • en-US
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  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
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Output format
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  • asciidoc
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