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(Invited) TmSiO As a CMOS-Compatible High-k Dielectric
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2016 (English)In: SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 / [ed] Roozeboom, F Narayanan, V Kakushima, K Timans, PJ Gusev, EP Karim, Z DeGendt, S, Electrochemical Society, 2016, no 4, p. 79-89Conference paper (Refereed)
Abstract [en]

Novel materials are being aggressively researched for integration in high-k/metal gate CMOS technology, as innovations in the gate stacks are necessary to sustain scaling toward the end of the roadmap. In this paper, we discuss thulium silicate as a candidate dielectric for integration as interfacial layer, focusing on compatibility with the requirements in terms of both process integration and effects on electrical device characteristics. In particular, we demonstrate that thulium silicate provides advantages over conventional chemical oxide interfacial layers in terms of scalability and channel mobility.

Place, publisher, year, edition, pages
Electrochemical Society, 2016. no 4, p. 79-89
Series
ECS Transactions, ISSN 1938-5862 ; 72
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-212356DOI: 10.1149/07204.0079ecstISI: 000406802700008Scopus ID: 2-s2.0-85010670227ISBN: 978-1-60768-714-6 OAI: oai:DiVA.org:kth-212356DiVA, id: diva2:1134574
Conference
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society, MAY 29-JUN 02, 2016, San Diego, CA
Note

QC 20170821

Available from: 2017-08-21 Created: 2017-08-21 Last updated: 2017-11-10Bibliographically approved

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Hellström, Per-Erik

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