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Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 83, no 1, 75-78 p.Article in journal (Refereed) Published
Abstract [en]

The leakage current in circular- and ring-shaped epitaxial 4H-SiC PiN mesa diodes with different size and periphery to area ratios was evaluated under the influence of the U-V irradiation and temperature in the range from room temperature (RT) to 250 degrees C. The surface leakage current component was found to dominate the reverse current characteristics and was found to be dependent on time and temperature both after reactive ion etching (RIE) of the diodes in the SF6/Ar gas mixture and after the UV irradiation. Charging of the surface states is believed to be responsible for the observed behavior. The LTV irradiation is believed to charge the surface positively. The drift of the I(V) characteristics is due to the trapping of the electrons neutralizing the positive donor states.

Place, publisher, year, edition, pages
2006. Vol. 83, no 1, 75-78 p.
Keyword [en]
SiC PiN diodes, leakage current, UV irradiation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-6594DOI: 10.1016/j.mee.2005.10.029ISI: 000234950800022Scopus ID: 2-s2.0-30344438824OAI: oai:DiVA.org:kth-6594DiVA: diva2:11347
Conference
3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials Singapore, SINGAPORE, JUL 03-08, 2005
Note
QC 20100927 QC 20111003. Conference: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. Singapore, SINGAPORE. JUL 03-08, 2005 Available from: 2006-12-12 Created: 2006-12-12 Last updated: 2011-10-03Bibliographically approved
In thesis
1. Characterization of dielectric layers for passivation of 4H-SiC devices
Open this publication in new window or tab >>Characterization of dielectric layers for passivation of 4H-SiC devices
2006 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. Despite this tremendous development in SiC technology the reliability issues, like bipolar device degradation, passivation, or low MOSFET channel mobility still remain to be solved.

This thesis focuses on SiC surface passivation and junction termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Five dielectrics with high dielectric constants, Al2O3, AlN, AlON, HfO2 and TiO2 have been investigated. The layers were deposited directly on SiC, or on the thermally oxidized SiC surfaces with several different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.7 kV, reaching 1.6 kV, compared to non passivated devices. Furthermore, AlON deposited on 4H SiC at room temperature provided interface quality comparable to that obtained with the thermally grown SiO2/SiC system.

As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury or deuterium lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments show also that the measured leakage currents of the order of pA are dominated by surface leakage.

Place, publisher, year, edition, pages
Stockholm: KTH, 2006. xi, 64 p.
Series
Trita-ICT/MAP, 2006:02
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-4229 (URN)978-91-7178-532-9 (ISBN)
Public defence
2006-12-15, Aula N2, KTH-Electrum 3, Isafordsg. 28, Kista, 10:15
Opponent
Supervisors
Note
QC 20100928Available from: 2006-12-12 Created: 2006-12-12 Last updated: 2010-09-28Bibliographically approved

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