Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 83, no 1, 75-78 p.Article in journal (Refereed) Published
The leakage current in circular- and ring-shaped epitaxial 4H-SiC PiN mesa diodes with different size and periphery to area ratios was evaluated under the influence of the U-V irradiation and temperature in the range from room temperature (RT) to 250 degrees C. The surface leakage current component was found to dominate the reverse current characteristics and was found to be dependent on time and temperature both after reactive ion etching (RIE) of the diodes in the SF6/Ar gas mixture and after the UV irradiation. Charging of the surface states is believed to be responsible for the observed behavior. The LTV irradiation is believed to charge the surface positively. The drift of the I(V) characteristics is due to the trapping of the electrons neutralizing the positive donor states.
Place, publisher, year, edition, pages
2006. Vol. 83, no 1, 75-78 p.
SiC PiN diodes, leakage current, UV irradiation
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-6594DOI: 10.1016/j.mee.2005.10.029ISI: 000234950800022ScopusID: 2-s2.0-30344438824OAI: oai:DiVA.org:kth-6594DiVA: diva2:11347
3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials Singapore, SINGAPORE, JUL 03-08, 2005
QC 20100927 QC 20111003. Conference: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. Singapore, SINGAPORE. JUL 03-08, 2005 2006-12-122006-12-122011-10-03Bibliographically approved