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Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, 456-459 p.Article in journal (Refereed) Published
Abstract [en]

190 nm thick aluminium nitride (AlN) with a dielectric constant of 8.8 was deposited by physical vapour deposition (PVD) on n- and p-type Si and n-type 4H-SiC samples. The Metal-Insulator-Semiconductor, MIS, structures were analysed by IV and CV techniques and 1.2 kV SiC diodes were used to evaluate leakage current before and after AlN deposition. The samples were prepared both with and without 5% HF dip after UV exposure, prior to the AlN deposition. Structural AlN analysis showed polycrystalline composition with a dominant [002] phase, a density of 3.27 g/cm(3) and stochiometry of Al0.4N0.6. Surface pre-treatment did not have much influence on the IV characteristics of Si samples (breakdown field similar to 3 MV/cm). However, the non-HF-etched sample is characterised by 2.5 times smaller CV hysteresis for the p-type sample at 100 kHz. The SiC MIS structures have a high leakage current, nevertheless a beneficial influence of UV irradiation is observed in the case of the non-HF-etched sample (soft breakdown field similar to 3 MV/cm compared to similar to 2 MV/cm for HF-etched sample). The diode reverse current was about 2 pA before UV irradiation and 4 and 600 pA after AlN deposition at room temperature and at 150 degrees C, respectively.

Place, publisher, year, edition, pages
2006. Vol. 515, 456-459 p.
Keyword [en]
silicon carbide, SiQ AlN, passivation
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-6599DOI: 10.1016/j.tsf.2005.12.261ISI: 000241220600017Scopus ID: 2-s2.0-33748762749OAI: oai:DiVA.org:kth-6599DiVA: diva2:11352
Note
QC 20100928. Conference: 12th International Conference on Thin Films. BRATISLAVA, SLOVAKIA. SEP 15-20, 2002Available from: 2006-12-12 Created: 2006-12-12 Last updated: 2011-09-29Bibliographically approved
In thesis
1. Characterization of dielectric layers for passivation of 4H-SiC devices
Open this publication in new window or tab >>Characterization of dielectric layers for passivation of 4H-SiC devices
2006 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. Despite this tremendous development in SiC technology the reliability issues, like bipolar device degradation, passivation, or low MOSFET channel mobility still remain to be solved.

This thesis focuses on SiC surface passivation and junction termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Five dielectrics with high dielectric constants, Al2O3, AlN, AlON, HfO2 and TiO2 have been investigated. The layers were deposited directly on SiC, or on the thermally oxidized SiC surfaces with several different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.7 kV, reaching 1.6 kV, compared to non passivated devices. Furthermore, AlON deposited on 4H SiC at room temperature provided interface quality comparable to that obtained with the thermally grown SiO2/SiC system.

As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury or deuterium lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments show also that the measured leakage currents of the order of pA are dominated by surface leakage.

Place, publisher, year, edition, pages
Stockholm: KTH, 2006. xi, 64 p.
Series
Trita-ICT/MAP, 2006:02
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-4229 (URN)978-91-7178-532-9 (ISBN)
Public defence
2006-12-15, Aula N2, KTH-Electrum 3, Isafordsg. 28, Kista, 10:15
Opponent
Supervisors
Note
QC 20100928Available from: 2006-12-12 Created: 2006-12-12 Last updated: 2010-09-28Bibliographically approved
2. Termination and passivation of Silicon Carbide Devices.
Open this publication in new window or tab >>Termination and passivation of Silicon Carbide Devices.
2005 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. Despite this tremendous development in SiC technology, the reliability issues like device degradation or high channel mobility still remain to be solved.

This thesis focuses on SiC surface passivation and termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Three dielectrics with high dielectric constants, Al2O3, AlN and TiO2, were deposited on SiC with different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.5 kV, reaching 1.6 kV, compared to non passivated devices.

As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments indicate also that the measured leakage currents of the order of pA are dominated by surface leakage.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. vii, 55 p.
Series
Trita-FTE, ISSN 0284-0545 ; 2005:3
Keyword
Silicon Carbide, SiC, passivation, dielectric materials
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-439 (URN)
Presentation
2005-09-30, C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:15
Opponent
Supervisors
Note
QC 20110114Available from: 2005-09-29 Created: 2005-09-29 Last updated: 2011-01-14Bibliographically approved

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Hallén, Anders

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