Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diodes
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 13, 132108- p.Article in journal (Refereed) Published
It was shown experimentally that charging InAs quantum dots (QDs) embedded in a small-area GaAs/AlAs double-barrier resonant tunneling diode (RTD) effectively modified the carrier transport properties of the RTD. By adopting and comparing the one-dimensional plane-wave and three-dimensional (3D) wave-packet transport theories we show that the electron transports in the QDRTD device are in the form of 3D wave packets, which are strongly affected by the 3D long-range Coulomb potential induced by charged InAs QDs. This explains well experimental data and indicates that the 3D wave-packet transport model is more appropriate for the QDRTD device.
Place, publisher, year, edition, pages
2008. Vol. 93, no 13, 132108- p.
Civil aviation, Electric fields, Electron tube diodes, Frequency dividing circuits, Indium arsenide, Optical waveguides, Quantum chemistry, Quantum electronics, Resonant tunneling, Semiconducting indium, Semiconductor diodes, Statistical mechanics, Temperature measuring instruments, Three dimensional, Transport properties, Tunnel diodes, Tunneling (excavation)
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-9340DOI: 10.1063/1.2993339ISI: 000259794100050ScopusID: 2-s2.0-53349095305OAI: oai:DiVA.org:kth-9340DiVA: diva2:113533
QC 20100902. Uppdaterad från In press till Published (20100902)2008-10-212008-10-212010-09-02Bibliographically approved