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Experimental and theoretical study of quantum dot resonant tunneling diodes for single photon detection
KTH, School of Biotechnology (BIO), Theoretical Chemistry.
2008 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Single photon detection has a broad application in the medical, telecommunication, as well as in infrared imaging fields. In this thesis I present my work in studying quantum dot (QD) resonant tunneling diodes (RTD) for single photon detection. The device was processed in the form of a free-standing small-area air bridge. A detailed series of experimental and theoretical characterizations have been performed to understand the electrical properties of the RTDs (without embedding any QDs) and QD-embedded RTDs (QDRTDs). It has been shown that external series and parallel resistances shift the resonant current peak to higher voltage, create the bistability effect observed in I-V characteristics, and reduce the peak-to-valley ratio. For the QDRTD device, three-dimensional wave packet carrier transport simulations show strong influence of the long-range Coulomb potential induced by the hole captured by the embedded InAs QDs, thus demonstrating the fundamental principle of single photon detection.

 

Two works are planned for the continuation of the graduate study after Lic examination. The optical response of the QDRTD will be experimentally and theoretically characterized in order to optimize the quantum efficiency for single photon detection. I will then concentrate on processing a one-dimensional photodetector array aiming at practical biotechnology applications.

Place, publisher, year, edition, pages
Stockholm: KTH , 2008. , 36 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-9342ISBN: 978-91-7415-117-6 (print)OAI: oai:DiVA.org:kth-9342DiVA: diva2:113536
Presentation
2008-10-15, FA31, AlabaNova, Roslagsbacken 21, Stockholm, 13:00 (English)
Supervisors
Note
QC 20101111Available from: 2008-10-21 Created: 2008-10-21 Last updated: 2010-11-11Bibliographically approved
List of papers
1. Effects of series and parallel resistances on the current-voltage characteristics of small-area air-bridge resonant tunneling diode
Open this publication in new window or tab >>Effects of series and parallel resistances on the current-voltage characteristics of small-area air-bridge resonant tunneling diode
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 7Article in journal (Refereed) Published
Abstract [en]

We have studied experimentally and theoretically the effects of series and parallel resistances on the current-voltage (I-V) characteristics of the resonant tunneling diode (RTD) in the format of a small-area freestanding air bridge. It has been shown by standard quantum mechanical considerations that the I-V characteristics consists of a simple resonant current peak (without bistability) and the voltage at the current peak is quite low, whereas experiments show not only a much high current-peak voltage, but also the bistability. Furthermore, experimental peak-to-valley ratio is in general quite low. By analyzing material and device structures, it has been demonstrated that the series resistance in the RTD contacts shifts the peak in current to higher voltage, it also creates the experimentally observed bistability effect in the region of the tunneling resonance. The parallel resistance induces a leakage current and reduces the peak-to-valley ratio. We have further performed similar analyses to many RTD structures reported in the literature and the conclusions remain the same.

Keyword
double-barrier structures, peak current densities, intrinsic, bistability, charge accumulation, room-temperature, quantum-well, devices, oscillations, sram, cell
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-17899 (URN)10.1063/1.2993547 (DOI)000260125500147 ()2-s2.0-54049122968 (Scopus ID)
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved
2. Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diodes
Open this publication in new window or tab >>Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diodes
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 13, 132108- p.Article in journal (Refereed) Published
Abstract [en]

 It was shown experimentally that charging InAs quantum dots (QDs) embedded in a small-area GaAs/AlAs double-barrier resonant tunneling diode (RTD) effectively modified the carrier transport properties of the RTD. By adopting and comparing the one-dimensional plane-wave and three-dimensional (3D) wave-packet transport theories we show that the electron transports in the QDRTD device are in the form of 3D wave packets, which are strongly affected by the 3D long-range Coulomb potential induced by charged InAs QDs. This explains well experimental data and indicates that the 3D wave-packet transport model is more appropriate for the QDRTD device.

Keyword
Civil aviation, Electric fields, Electron tube diodes, Frequency dividing circuits, Indium arsenide, Optical waveguides, Quantum chemistry, Quantum electronics, Resonant tunneling, Semiconducting indium, Semiconductor diodes, Statistical mechanics, Temperature measuring instruments, Three dimensional, Transport properties, Tunnel diodes, Tunneling (excavation)
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-9340 (URN)10.1063/1.2993339 (DOI)000259794100050 ()2-s2.0-53349095305 (Scopus ID)
Note
QC 20100902. Uppdaterad från In press till Published (20100902)Available from: 2008-10-21 Created: 2008-10-21 Last updated: 2010-09-02Bibliographically approved
3. Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors
Open this publication in new window or tab >>Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors
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2007 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 89, no 3, 701-705 p.Article in journal (Refereed) Published
Abstract [en]

We study the dark current of the GaAs/AlGaAs quantum-well infrared photodetector (QWIP) by assuming a drift-diffusion carrier transport in the barriers where the electric fields are obtained by the current continuity condition and the self-consistent energy band structure. It has been shown that due to the current continuity condition, the dark currents across the QWIP devices are determined by the thermionic emission from the emitter to the multiple quantum well (MQW) region. The self-consistent calculation of the Schrodinger and Poisson equations shows a weak electric field in the barrier region connecting to the emitter (much smaller than the average field across the QWIP at low bias) due to the accumulation of carriers in the triangle quantum well formed at the emitter-MQW interface, which results in a very small dark current at low bias. The numerical results explain well our experimental observation.

Keyword
self-consistent model
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-16967 (URN)10.1007/s00339-007-4142-2 (DOI)000249663500020 ()2-s2.0-34748889520 (Scopus ID)
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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