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Scaling of 4H-SiC p-i-n photodiodes for high temperature applications
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
2017 (English)In: 2017 75th Annual Device Research Conference (DRC), Institute of Electrical and Electronics Engineers (IEEE), 2017Conference paper (Refereed)
Abstract [en]

Ultraviolet (UV) detection is important in astronomy, combustion detections and medical analysis. Solid-state UV detectors based on wide band gap semiconductors, such as 4H-SiC, are widely studied because of their excellent electrical properties [1]. 4H-SiC based UV detectors are solar blind and can be applied in extremely high temperature environments [2]. However, the state-of-art 4H-SiC photodetectors still have large sizes (>10000 μm2), which are not suitable to be integrated into high resolution UV photography sensors. To build a full-frame UV imaging sensor containing megapixels, photodiodes smaller than 20 μm by side are necessary. Here, we report the fabrication and characterization of 4H-SiC p-i-n photodiodes with mesa areas scaled from 40000 μm2 to 400 μm2. The relationships between the parameters and the areas of the photodiodes are discussed. The photodiodes are fully functional from room temperature (RT) to 500 °C.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017.
Series
Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
National Category
Other Engineering and Technologies
Identifiers
URN: urn:nbn:se:kth:diva-213521DOI: 10.1109/DRC.2017.7999445Scopus ID: 2-s2.0-85028060479ISBN: 9781509063277 OAI: oai:DiVA.org:kth-213521DiVA: diva2:1137839
Conference
75th Annual Device Research Conference, DRC 2017, University of Notre DameSouth Bend, United States, 25 June 2017 through 28 June 2017
Note

QC 20170901

Available from: 2017-09-01 Created: 2017-09-01 Last updated: 2017-09-01Bibliographically approved

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael
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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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  • modern-language-association-8th-edition
  • vancouver
  • Other style
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  • Other locale
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Output format
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