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High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-1230-7133
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
2017 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 135, p. 65-70Article in journal (Refereed) Published
Abstract [en]

This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 degrees C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is similar to 1.1 MHz at 27 degrees C, and decreases to similar to 0.5 MHz at 500 degrees C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth similar to 0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

Place, publisher, year, edition, pages
Elsevier, 2017. Vol. 135, p. 65-70
Keywords [en]
Bipolar junction transistor (BJT), High temperature, High frequency, Integrated circuits (ICs), Integrator, Operational amplifier (OpAmp), Silicon carbide (SiC), Spice Gummel-Poon (SGP)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
URN: urn:nbn:se:kth:diva-213692DOI: 10.1016/j.sse.2017.06.002ISI: 000408038600010Scopus ID: 2-s2.0-85021419590OAI: oai:DiVA.org:kth-213692DiVA, id: diva2:1138297
Funder
Swedish Foundation for Strategic Research
Note

QC 20170905

Available from: 2017-09-04 Created: 2017-09-04 Last updated: 2017-09-12Bibliographically approved
In thesis
1. SiC Readout IC for High Temperature Seismic Sensor System
Open this publication in new window or tab >>SiC Readout IC for High Temperature Seismic Sensor System
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved.

In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.

Place, publisher, year, edition, pages
Stockholm, Sweden: KTH Royal Institute of Technology, 2017. p. 128
Series
TRITA-ICT ; 17
Keywords
Silicon carbide (SiC), bipolar junction transistor (BJT), integrated circuit (IC), sigma-delta (Σ∆), data conversion, operational amplifier(OpAmp), VBIC, SPICE Gummel-poon, high-temperature, electromechanical, accelerometer, capacitive sensor
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-213969 (URN)978-91-7729-498-6 (ISBN)
Public defence
2017-10-06, Ka-Sal A (Sal Östen Mäkitalo) KTH, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
Swedish Foundation for Strategic Research , HOTSiCKnut and Alice Wallenberg Foundation, Working on Venus
Note

QC 20170911

Available from: 2017-09-11 Created: 2017-09-07 Last updated: 2017-09-11Bibliographically approved

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