Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-1230-7133
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 7, 2782-2788 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents the first fully integrated sigma-delta modulator implemented in an in-house silicon carbide (SiC) bipolar technology for high-temperature applications. A second-order 1-b continuous-time architecture is adopted. Dual-loop compensation technique is employed to accommodate one clock period comparator delay. The circuits are designed to have enoughmargins without degrading the modulator's performance, considering the variation of device parameters over a large temperature range. The measurement results show that from room temperature to 500 degrees C, themodulator's peak SNDR is constant around 30 dB at a clock speed of 512 kHz. The chip area of the modulator is 6.9 mm x 2.8 mm with one metal layer. It consumes around 1 W from a 15 V power supply. This paper demonstrates the feasibility to further develop highly integrated SiC bipolar junction transistor integrated circuits for extremely high-temperature sensing applications.

Place, publisher, year, edition, pages
2017. Vol. 64, no 7, 2782-2788 p.
Keyword [en]
Analog-to-digital converter (ADC), bipolar junction transistor (BJT), comparator, high temperature, integrated circuit (IC), OpAmp, sigma–delta modulator, silicon carbide (SiC), SPICE Gummel–Poon (SGP), wide bandgap
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
URN: urn:nbn:se:kth:diva-213694DOI: 10.1109/TED.2017.2700632ISI: 000403452900002Scopus ID: 2-s2.0-85019843519OAI: oai:DiVA.org:kth-213694DiVA: diva2:1138301
Projects
HOTSiC
Funder
Swedish Foundation for Strategic Research
Note

QC 20170905

Available from: 2017-09-04 Created: 2017-09-04 Last updated: 2017-09-08Bibliographically approved
In thesis
1. SiC Readout IC for High Temperature Seismic Sensor System
Open this publication in new window or tab >>SiC Readout IC for High Temperature Seismic Sensor System
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved.

In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.

Place, publisher, year, edition, pages
Stockholm, Sweden: KTH Royal Institute of Technology, 2017. 128 p.
Series
TRITA-ICT, 17
Keyword
Silicon carbide (SiC), bipolar junction transistor (BJT), integrated circuit (IC), sigma-delta (Σ∆), data conversion, operational amplifier(OpAmp), VBIC, SPICE Gummel-poon, high-temperature, electromechanical, accelerometer, capacitive sensor
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-213969 (URN)978-91-7729-498-6 (ISBN)
Public defence
2017-10-06, Ka-Sal A (Sal Östen Mäkitalo) KTH, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
Swedish Foundation for Strategic Research , HOTSiCKnut and Alice Wallenberg Foundation, Working on Venus
Note

QC 20170911

Available from: 2017-09-11 Created: 2017-09-07 Last updated: 2017-09-11Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopushttp://ieeexplore.ieee.org/document/7929313/

Search in DiVA

By author/editor
Tian, YeZetterling, Carl-Mikael
By organisation
Integrated devices and circuits
In the same journal
IEEE Transactions on Electron Devices
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 60 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf