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Study of the slow-wave interaction in a three valley semiconductor in high electric fields
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)
2017 (English)Conference paper, Oral presentation only (Refereed)
Abstract [en]

The interaction of a slow-wave in a corrugated dielectric waveguide with drifting electron gas in a semiconductor with the multi-valleys conduction band is studied in the linear model. Contribution of each valley into the net loss/amplification is investigated. Substantial amplification is possible in large fields due to slow-wave interaction with carriers in satellite valleys. Amplification by the valley carriers in high-field significantly impeded by electron heating.

Place, publisher, year, edition, pages
2017.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-213746OAI: oai:DiVA.org:kth-213746DiVA, id: diva2:1138664
Conference
42 International Conference on Infrared, Millimeter and Terahertz Waves 27 AUGUST - 1 SEPTEMBER 2017, Cancún, México
Note

QC 20170907

Available from: 2017-09-06 Created: 2017-09-06 Last updated: 2017-09-07Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

http://www.cio.mx/irmmw-thz2017/

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Makhalov, PetrLyubchenko, DmitryOberhammer, Joachim
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