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Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-6459-749X
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2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 9, p. 3927-3933Article in journal (Refereed) Published
Abstract [en]

In Part I, we have established a wafer-scale, CMOS compatible graphene transfer for the back end of the line integration. In Part II of this paper, we analyze statistical data of device properties and draw conclusions about possible causes of device failure. Statistical analysis is performed for device mobility and compared with the yield analysis. To complement this analysis, detailed Raman spectra are employed to analyze strain. In addition, device models developed in Part I are examined and provide further insight. From the analysis, it appears that compressive strain introduced during the graphene transfer process is may be the primary source for device failure. Moreover, we speculate based on the device statistics that the mitigation of compressive strain will improve device mobility, carrier density, and reduce variability. In addition, the presence of residues, tears, and cracks in the graphene may result in some device failure.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, no 9, p. 3927-3933
Keywords [en]
Graphene, graphene FET (GFET), RF, statistics, wafer-scale fabrication
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-214310DOI: 10.1109/TED.2017.2727823ISI: 000408118700060OAI: oai:DiVA.org:kth-214310DiVA, id: diva2:1141995
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QC 20170918

Available from: 2017-09-18 Created: 2017-09-18 Last updated: 2017-09-18Bibliographically approved

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Malm, B. Gunnar

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