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Wafer-Scale Statistical Analysis of Graphene FETs-Part I: Wafer-Scale Fabrication and Yield Analysis
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-6459-749X
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2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 9, p. 3919-3926Article in journal (Refereed) Published
Abstract [en]

Wafer-scale, CMOS compatible graphene transfer has been established for device fabrication and can be integrated into a conventional CMOS process flow back end of the line. In Part I of this paper, statistical analysis of graphene FET (GFET) devices fabricated on wafer scale is presented. Device yield is approximately 75% (for 4500 devices) measured in terms of the quality of the top gate, oxide layer, and graphene channel. Statistical evaluation of the device yield reveals that device failure occurs primarily during the graphene transfer step. In Part II of this paper, device statistics are further examined to reveal the primary mechanism behind device failure. The analysis from Part II suggests that significant improvements to device yield, variability, and performance can be achieved through mitigation of compressive strain introduced in the graphene layer during the graphene transfer process. The combined analyses from Parts I and II present an overview of mechanisms influencing GFET behavior as well as device yield. These mechanisms include residues on the graphene surface, tears, cracks, contact resistance at the graphene/metal interface, gate leakage as well as the effects of postprocessing.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 64, no 9, p. 3919-3926
Keywords [en]
Graphene, graphene FET ( GFET), RF, statistics, wafer-scale fabrication
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-214309DOI: 10.1109/TED.2017.2727820ISI: 000408118700059OAI: oai:DiVA.org:kth-214309DiVA, id: diva2:1141998
Note

QC 20170918

Available from: 2017-09-18 Created: 2017-09-18 Last updated: 2017-09-18Bibliographically approved

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Malm, B. Gunnar

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