High-speed optical modulator based on intersubband transitions in InGaAs/InAlAs/AlAsSb coupled quantum wells
2003 (English)In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2003, 308-311 p.Conference paper (Refereed)
We investigate theoretically an optical modulator based on intersubband transitions in InGaAs/InAlAs/AlAsSb coupled quantum wells with an operating wavelength of 1.55 mum. We show that such a modulator has the potential to outperform conventional electroabsorption and electro-optic modulators with a combination of high speed, moderate voltage swing, negative chirp and high saturation power. The modulator studied here is predicted to have a RC-limited speed of 90 GHz with 10 dB extinction ratio at a peak-to-peak voltage of 2.0 V.
Place, publisher, year, edition, pages
2003. 308-311 p.
, Conference proceedings - indium phosphide and related materials, ISSN 1092-8669
Absorption, Electrooptical devices, Light modulators, Phase transitions, Semiconducting aluminum compounds, Semiconducting indium compounds
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-6658ISI: 000183253000080OAI: oai:DiVA.org:kth-6658DiVA: diva2:11430
2003 International Conference Indium Phosphide and Related Materials; Santa Barbara, CA; 12 May 2003 through 16 May 2003
QC 201009032006-12-152006-12-152010-09-03Bibliographically approved