Investigation of intersubband absorption of GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 301, no SPEC. ISS., 301-302 p.Article in journal (Refereed) Published
Ten period GaN/AlN multiple quantum well (MQW) structures were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates and metal-organic vapour-phase epitaxy (MOVPE)-grown GaN templates. Samples were investigated by high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared (FT-IR) spectroscopy. Intersubband (IS) absorbances and FWHM of IS absorption peaks indicated that samples grown on the GaN templates had better characteristics, resulting in a FWHM as low as 93 meV at a peak energy of 700 meV.
Place, publisher, year, edition, pages
2007. Vol. 301, no SPEC. ISS., 301-302 p.
high-resolution X-ray diffraction, molecular beam epitaxy, quantum wells, nitrides
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-6661DOI: 10.1016/j.jcrysgro.2006.11.258ISI: 000246015800105ScopusID: 2-s2.0-33947321547OAI: oai:DiVA.org:kth-6661DiVA: diva2:11433
QC 201009032006-12-152006-12-152010-09-20Bibliographically approved