Effect of substrate proximity on luminescence yield from Si nanocrystals
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 11, 111124- p.Article in journal (Refereed) Published
The influence of the proximity of a high refractive index substrate on the luminescence of Si nanocrystals was investigated by time-integrated and time-resolved photoluminescence. The luminescence yield was found to be ∼2.5 times larger for emitters distanced from the substrate compared to those in proximity with the substrate, while luminescence decay measurements revealed only a slight increase in the luminescence lifetime (∼15%). Results are discussed in terms of local density of optical modes surrounding a pointlike light emitter with important implications for the collection efficiency of luminescence and the estimation of internal quantum efficiency for a quantum dot.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2006. Vol. 89, no 11, 111124- p.
Density (optical), Photoluminescence, Quantum efficiency, Refractive index, Semiconductor quantum dots, Silicon
IdentifiersURN: urn:nbn:se:kth:diva-6699DOI: 10.1063/1.2226976ISI: 000240545400024ScopusID: 2-s2.0-33748701270OAI: oai:DiVA.org:kth-6699DiVA: diva2:11480
QC 201009102012-01-132006-12-292012-01-13Bibliographically approved