Single dot optical spectroscopy of silicon nanocrystals: Low temperature measurements
2005 (English)In: Optical materials (Amsterdam), ISSN 0925-3467, Vol. 27, no 5, 973-976 p.Article in journal (Refereed) Published
Single dot spectroscopy allows studying properties of a single nanocrystal avoiding inhomogeneous broadening of the emission band. Here, data obtained by this technique for Si nanocrystals fabricated by electron beam lithography, plasma etching and subsequent size-reduction by oxidation are presented. First, blinking (on–off intermittence) of the luminescence was observed for most individual nanocrystals, although some exhibited relatively stable luminescence. As a result of the quantum confinement effect spectra with different emission wavelengths for different nanocrystals were recorded. While at room temperature the full width at half-maximum of the nanocrystal emission peaks was measured to be 100–150 meV, at 80 K the linewidth for some dots appeared to be about 25 meV only. The observed temperature dependence of the homogeneous linewidth may lead to an understanding of the exciton–phonon interaction in indirect band-gap quantum dots.
Place, publisher, year, edition, pages
2005. Vol. 27, no 5, 973-976 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-6700DOI: 10.1016/j.optmat.2004.08.046ISI: 000227621300048ScopusID: 2-s2.0-13444273345OAI: oai:DiVA.org:kth-6700DiVA: diva2:11481
QC 20100922 QC 20111011. Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration. Strasbourg, FRANCE. MAY 25-28, 2004. Tidigare titel: Single dot optical spectroscopy of silicon nanocrystals: Low-T measurements 2006-12-292006-12-292011-10-11Bibliographically approved