Light emission from silicon nanocrystals: probing a single quantum do
2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 15, 5249-5253 p.Article in journal (Refereed) Published
Analysis of low-temperature photoluminescence measurements performed on single silicon nanocrystals is presented. The luminescence emission linewidth of Si nanocrystals is found to be less than thermal broadening at low temperature, confirming the atomic-like nature of their energetic states. Beside the main peak the low-temperature spectra reveal a similar to 6 meV replica, the origin of which is discussed. For some of the investigated dots, we also observe a similar to 60 meV transverse optical (TO) phonon replica. The regular arrangement of individual nanocrystals used in this work enables combined high-resolution transmission electron microscopy (TEM) and low-temperature photoluminescence characterization of the same single quantum dot.
Place, publisher, year, edition, pages
Elsevier, 2006. Vol. 252, no 15, 5249-5253 p.
silicon nanocrystal, luminescence, electron-phonon interactions, semiconductor nanocrystals
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-6701DOI: 10.1016/j.apsusc.2005.12.030ISI: 000238623300003ScopusID: 2-s2.0-33744533732OAI: oai:DiVA.org:kth-6701DiVA: diva2:11482
8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films Stockholm, SWEDEN, JUN 20-23, 2005
QC 20100922. Conference: 8th International Conference on Atomically Controlled Surfaces, Interfaces, and Nanostructures/13th International Congress on Thin Films. Stockholm, SWEDEN. JUN 20-23, 2005 2012-01-272006-12-292012-01-27Bibliographically approved