Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
The impact of atomic layer depositions on high quality Ge/GeO2 interfaces fabricated by rapid thermal annealing in O-2 ambient
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-5845-3032
2017 (English)In: 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 164-166, article id 7947553Conference paper (Refereed)
Abstract [en]

This work demonstrates high quality Ge/GeO2 interfaces fabricated by O-2 RTA that are degraded by a good quality SiO2 layer deposited by ALD. However, neither O-3 and H2O precursors commonly used during subsequent high-k ALDs nor Si precursor AP-LTO-330 do not degrade the interface. Thus Dit increase after SiO2 deposition is likely due to intermixing. Therefore, the effect of subsequent ALDs on the interface quality has to be considered while designing Ge-based gate stacks.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 164-166, article id 7947553
Keywords [en]
Germanium, GeO2, high-k, ALD, D-it
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-214907ISI: 000409022100069Scopus ID: 2-s2.0-85021891351ISBN: 978-1-5090-4660-7 OAI: oai:DiVA.org:kth-214907DiVA, id: diva2:1151010
Conference
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 28 February 2017 through 2 March 2017
Funder
Swedish Foundation for Strategic Research
Note

QC 20171020

Available from: 2017-10-20 Created: 2017-10-20 Last updated: 2017-10-23Bibliographically approved

Open Access in DiVA

No full text in DiVA

Scopus

Authority records BETA

Hellström, Per-ErikÖstling, Mikael

Search in DiVA

By author/editor
Zurauskaite, LauraHellström, Per-ErikÖstling, Mikael
By organisation
Integrated devices and circuitsElectronics
Other Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 21 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf