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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits. Ascatron AB, Sweden.
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2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications Inc., 2017, Vol. 897, p. 455-458Conference paper (Refereed)
Abstract [en]

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2017. Vol. 897, p. 455-458
Series
Materials Science Forum, ISSN 0255-5476 ; 897
Keywords [en]
Buried grid, High temperature, High voltage, Junction barrier Schottky (JBS), Silicon carbide (SiC)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-216328DOI: 10.4028/www.scientific.net/MSF.897.455Scopus ID: 2-s2.0-85020051562ISBN: 9783035710434 OAI: oai:DiVA.org:kth-216328DiVA, id: diva2:1151298
Conference
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016
Note

QC 20171023

Available from: 2017-10-23 Created: 2017-10-23 Last updated: 2017-10-23Bibliographically approved

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CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf