Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
InP lateral overgrowth technology for silicon photonics
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).
Show others and affiliations
2010 (English)In: Optics InfoBase Conference Papers, Optical Society of America (OSA) , 2010Conference paper (Refereed)
Abstract [en]

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we can use the so called defect necking effect to filter out the threading dislocations propagating from the seed layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of silicon wafer. The obtained characterization results show that the grown InP layer has very high quality, which can be used as the base for further process of active photonic components on top of silicon.

Place, publisher, year, edition, pages
Optical Society of America (OSA) , 2010.
Keyword [en]
Epitaxial lateral overgrowth, Hydride vapour phase epitaxy, Integrated optics materials, Semiconducting III-V materials, Silicon photonics, Characterization, Epitaxial growth, Photonic devices, Semiconducting silicon, Silicon oxides, Silicon wafers, Hydride vapour phase epitaxies, Semi conducting III-V materials, Photonics
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:kth:diva-216935DOI: 10.1109/ACP.2010.5682513Scopus ID: 2-s2.0-85030032154ISBN: 9780819485540 (print)OAI: oai:DiVA.org:kth-216935DiVA: diva2:1152517
Conference
Asia Communications and Photonics Conference and Exhibition, ACP 2010, 8 December 2010 through 12 December 2010, Shanghai
Note

QC 20171025

Available from: 2017-10-25 Created: 2017-10-25 Last updated: 2018-01-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Lourdudoss, SebastianWosinski, Lech

Search in DiVA

By author/editor
Wang, Z.Junesand, CarlMetaferia, WondwosenHu, C.Lourdudoss, SebastianWosinski, Lech
By organisation
School of Information and Communication Technology (ICT)
Computer and Information Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 5 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf