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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
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2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications, 2017, Vol. 897, p. 669-672Conference paper (Refereed)
Abstract [en]

For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200ºC. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.

Place, publisher, year, edition, pages
Trans Tech Publications, 2017. Vol. 897, p. 669-672
Series
Materials Science Forum, ISSN 0255-5476 ; 897
Keywords [en]
Harsh environment electronics, Logic inverter, SiC nMOSFET
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-216709DOI: 10.4028/www.scientific.net/MSF.897.669Scopus ID: 2-s2.0-85020041057ISBN: 9783035710434 OAI: oai:DiVA.org:kth-216709DiVA, id: diva2:1153024
Conference
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016
Note

QC  20171027

Available from: 2017-10-27 Created: 2017-10-27 Last updated: 2017-10-27Bibliographically approved

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Östling, MikaelZetterling, Carl-Mikael
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