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Challenges on drive circuit design for series-connected SiC power transistors
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.
2017 (English)In: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Trans Tech Publications, 2017, Vol. 897, p. 655-660Conference paper (Refereed)
Abstract [en]

The breakdown voltages of the currently available 1.2 and 1.7-kV classes Silicon Carbide (SiC) transistors are not sufficient to operate under medium blocking voltages. On the other hand, the fabrication yields of the available high-voltage SiC transistors are still low, resulting in low current capabilities. Series-connection of several individual transistors is the solution to meet medium blocking voltages and high current ratings. This paper identifies the most crucial design challenges of gate and base drive circuits suitable for driving fast-switching series-connected SiC transistors. These challenges are presented and analyzed using Finite Element Method simulations and experimental investigations.

Place, publisher, year, edition, pages
Trans Tech Publications, 2017. Vol. 897, p. 655-660
Series
Materials Science Forum, ISSN 0255-5476 ; 897
Keyword [en]
Base driver, Gate driver, High-voltage, Series-connection, Switching performance
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-216711DOI: 10.4028/www.scientific.net/MSF.897.655Scopus ID: 2-s2.0-85019979865ISBN: 9783035710434 OAI: oai:DiVA.org:kth-216711DiVA, id: diva2:1153135
Conference
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, Halkidiki, Greece, 25 September 2016 through 29 September 2016
Note

QC 20171027

Available from: 2017-10-27 Created: 2017-10-27 Last updated: 2017-10-27Bibliographically approved

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Citation style
  • apa
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  • nn-NB
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  • Other locale
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Output format
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