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Temperature-dependent absorption and gain of ytterbium-doped potassium double tungstates for chip-scale amplifiers and lasers
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2017 (English)In: Integrated Optics: Devices, Materials, and  Technologies XXI, SPIE - International Society for Optical Engineering, 2017, Vol. 10106, article id 1010606Conference paper (Refereed)
Abstract [en]

Ytterbium-doped potassium rare-earth double tungstate thin films are excellent candidates for highly efficient waveguide lasers, as well as high-gain waveguide amplifiers, with a record-high optical gain per unit length of 935 dB/cm recently demonstrated. However, the spectroscopic properties of these highly ytterbium-doped thin films and, in particular, their temperature dependence are not well investigated. These characteristics are required for the understanding of the behavior of the fabricated optical devices and crucial for further device optimization. We experimentally determined the absorption cross-sections for a potassium ytterbium gadolinium double tungstate, KYb0.57Gd0.43(WO4)2, thin film grown lattice matched onto an undoped KY(WO4)2 substrate. At room temperature, the peak cross-section value at 981 nm and the overall absorption spectrum are very similar to those of Yb-doped bulk potassium double tungstate crystals, although Yb is now the dominating rare-earth content. The temperature-dependent study shows a significant decrease of the absorption cross-section values at 933 nm and 981 nm with increasing temperature. We verify theoretically that this is due to the temperature dependence of fractional populations in the individual Stark levels of the absorbing crystal-field multiplet, in combination with the linewidth broadening with increasing temperature. Further investigations suggest that the broadening of absorption linewidth at 981 nm originates in the intra-manifold relaxation between the two lowest Stark levels of the ground state. Finally, the implications of the spectroscopic findings on the operating characteristics of waveguide amplifiers are investigated. Amplifiers operating at 80 °C are expected to exhibit only 67% of the maximum theoretical gain at room temperature.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2017. Vol. 10106, article id 1010606
Series
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 10106
Keywords [en]
Integrated optics materials, Lasers, Optical amplifiers, Rare-earth-doped materials, Ytterbium
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Other Physics Topics
Identifiers
URN: urn:nbn:se:kth:diva-216327DOI: 10.1117/12.2252154ISI: 000407041100004Scopus ID: 2-s2.0-85020313509ISBN: 9781510606531 OAI: oai:DiVA.org:kth-216327DiVA, id: diva2:1153601
Conference
Integrated Optics: Devices, Materials, and Technologies XXI 2017, San Francisco, United States, 30 January 2017 through 1 February 2017
Note

QC 20171031

Available from: 2017-10-31 Created: 2017-10-31 Last updated: 2017-10-31Bibliographically approved

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