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500 degrees C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Electronics.
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2017 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 38, no 10, 1429-1432 p.Article in journal (Refereed) Published
Abstract [en]

High-current 4H-SiC lateral BJTs for hightemperature monolithic integrated circuits are fabricated. The BJTs have three different sizes and the designs are optimized in terms of emitter finger width and length and the device layout to have higher current density (J(C)), lower on-resistance (R-ON), and more uniform current distribution. A maximum current gain (beta) of >53 at significantly high current density was achieved for different sizes of SiC BJTs. The BJTs aremeasured fromroom temperature to 500 degrees C. An open-base breakdown voltage (V-CEO) of > 50 V is measured for the devices.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2017. Vol. 38, no 10, 1429-1432 p.
Keyword [en]
4H-SiC, lateral BJT, high-current, monolithic integrated circuit
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-217444DOI: 10.1109/LED.2017.2737558ISI: 000413760600019OAI: oai:DiVA.org:kth-217444DiVA: diva2:1158107
Note

QC 20171117

Available from: 2017-11-17 Created: 2017-11-17 Last updated: 2017-11-17Bibliographically approved

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Elahipanah, HosseinSalemi, ArashZetterling, Carl-Mikael

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Elahipanah, HosseinKargarrazi, SalehSalemi, ArashÖstling, MikaelZetterling, Carl-Mikael
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Integrated devices and circuitsSchool of Information and Communication Technology (ICT)Electronics
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IEEE Electron Device Letters
Electrical Engineering, Electronic Engineering, Information Engineering

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