Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
The Challenges of Advanced CMOS Process from 2D to 3D
KTH, School of Information and Communication Technology (ICT). Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
Show others and affiliations
2017 (English)In: Applied Sciences, E-ISSN 2076-3417, Vol. 7, no 10, 1047Article, review/survey (Refereed) Published
Abstract [en]

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

Place, publisher, year, edition, pages
MDPI AG , 2017. Vol. 7, no 10, 1047
Keyword [en]
FinFETs, CMOS, device processing, integrated circuits
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:kth:diva-217946DOI: 10.3390/app7101047ISI: 000414457800085Scopus ID: 2-s2.0-85031506154OAI: oai:DiVA.org:kth-217946DiVA: diva2:1158772
Note

QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2018-01-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Radamson, Henry H.

Search in DiVA

By author/editor
Radamson, Henry H.
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Applied Sciences
Computer and Information Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf