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Trilayer Graphene as a Candidate Material for Phase-Change Memory Applications
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits. KTH, Centres, SeRC - Swedish e-Science Research Centre.
KTH, Centres, SeRC - Swedish e-Science Research Centre.ORCID iD: 0000-0002-8222-3157
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2016 (English)In: MRS ADVANCES, ISSN 2059-8521, Vol. 1, no 20, 1487-1494 p.Article in journal (Refereed) Published
Abstract [en]

There is pressing need in computation of a universal phase change memory consolidating the speed of RAM with the permanency of hard disk storage. A potentiated scanning tunneling microscope tip traversing the soliton separating a metallic, ABA-stacked phase and a semiconducting ABC-stacked phase in trilayer graphene has been shown to permanently transform ABA-stacked regions to ABC-stacked regions. In this study, we used density functional theory (DFT) calculations to assess the energetics of this phase-change and explore the possibility of organic functionalization using s-triazine to facilitate a reverse phase-change from rhombohedral back to Bernal in graphene trilayers. A significant deviation in the energy per simulated atom arises when s-triazine is adsorbed, favoring the transformation of the ABC phase to the ABA phase once more. A phase change memory device utilizing rapid, energy-efficient, reversible, field-induced phase-change in graphene trilayers could potentially revolutionize digital memory industry.

Place, publisher, year, edition, pages
CAMBRIDGE UNIV PRESS , 2016. Vol. 1, no 20, 1487-1494 p.
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Physical Chemistry
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URN: urn:nbn:se:kth:diva-217091DOI: 10.1557/adv.2016.237ISI: 000412532600013OAI: oai:DiVA.org:kth-217091DiVA: diva2:1158977
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QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2017-11-21Bibliographically approved

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Elgammal, KarimHammar, MattiasÖstling

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