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Refractive-index variation with rare-earth incorporation in amorphous Al2O3 thin films
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2017 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 476, p. 95-99Article in journal (Refereed) Published
Abstract [en]

Rare-earth-doped amorphous aluminum oxide (Al2O3;RE3+) thin films are attractive materials for near-IR amplifiers and lasers that can be integrated with silicon-on-insulator waveguides or deposited onto CMOS-fabricated integrated optical structures. We characterize reactively co-sputtered Al2O3;Tm3+ films on silicon by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and Raman spectroscopy. The refractive index is systematically studied for different Tm3+ concentrations. The resulting increase of refractive index is explained by analyzing the mechanism of incorporating Tm3+ ions into the amorphous Al2O3 network. Sellmeier dispersion formulas are presented.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 2017. Vol. 476, p. 95-99
Keywords [en]
Refractive index, Aluminum oxide, Thin films, Rare-earth ions
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-217407DOI: 10.1016/j.jnoncrysol.2017.09.033ISI: 000413615800013OAI: oai:DiVA.org:kth-217407DiVA, id: diva2:1159005
Note

QC 20171121

Available from: 2017-11-21 Created: 2017-11-21 Last updated: 2017-11-21Bibliographically approved

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Pollnau, Markus

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Loiko, PavelIsmail, NurGötelid, MatsPollnau, Markus
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