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Growth, defects and doping of 3C-SiC on hexagonal polytypes
KTH, School of Engineering Sciences (SCI), Applied Physics.
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2017 (English)In: ECS Transactions, Electrochemical Society, 2017, Vol. 80, no 7, p. 107-115Conference paper, Published paper (Refereed)
Abstract [en]

Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H- or 4H-SiC) are still at the laboratory stage. There are several challenges in the control of polytype stability and formation of structural defects which have to be eliminated to reveal the full potential of this material. Nevertheless, 3C-SiC has been explored for various energy, environment and biomedical applications which significantly benefit from the intrinsic semiconductor properties of this material. The future of 3C-SiC and its applications depends on the advances which will be made in improving crystalline quality, enlarging crystal size and controlling doping levels which have not been entirely explored due to the lack of high quality 3C-SiC substrates. This paper reviews recent progress in growth and doping of thick 3C-SiC layers on hexagonal SiC substrates using sublimation epitaxy. It covers the growth process on off-axis substrates and defects occurrence, as well as the issue of obtaining high resistivity material.

Place, publisher, year, edition, pages
Electrochemical Society, 2017. Vol. 80, no 7, p. 107-115
Series
ECS Transactions, ISSN 1938-6737 ; 80
National Category
Other Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-218132DOI: 10.1149/08007.0107ecstISI: 000425017700009Scopus ID: 2-s2.0-85033580099ISBN: 9781607685395 OAI: oai:DiVA.org:kth-218132DiVA, id: diva2:1159695
Conference
Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting, National Harbor, United States, 1 October 2017 through 5 October 2017
Funder
Swedish Research Council, 621-2014-5825
Note

QC 20171123

Available from: 2017-11-23 Created: 2017-11-23 Last updated: 2018-03-05Bibliographically approved

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CiteExportLink to record
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