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Investigations of sol-gel ZnO films nanostructured by reactive ion beam etching for broadband anti-reflection
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics.
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 9, P653-P659 p.Article in journal (Refereed) Published
Abstract [en]

A novel ZnO dry etching approach is introduced using reactive ion beam etching of thick sol-gel ZnO layers for controlled nanodisk/nanocone array fabrication. In this approach the same system can be used for the colloidal lithography mask (silica particles) size reduction by a fluorine-based chemistry and etching of the ZnO nanostructures by a CH4/H2/Ar chemistry. This resulted in a ZnO:SiO2 etch selectivity of ~3.4 and etch rate of ~56 nm/min. Thick sol-gel ZnO layers, nanodisk arrays and (truncated) nanocone arrays were fabricated and their optical properties analyzed by finite-difference time-domain simulations and spectrally-resolved total/specular reflectivity measurements. The demonstrated broadband omnidirectional anti-reflection, controlled nanostructure period/geometry and low absorption in the visible-NIR spectrum makes these sol-gel ZnO nanostructures very interesting for many optoelectronic applications, including photovoltaics.

Place, publisher, year, edition, pages
Electrochemical Society, 2017. Vol. 6, no 9, P653-P659 p.
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URN: urn:nbn:se:kth:diva-218381DOI: 10.1149/2.0331709jssISI: 000418363500027Scopus ID: 2-s2.0-85033797991OAI: oai:DiVA.org:kth-218381DiVA: diva2:1160725
Funder
Swedish Research CouncilSwedish Energy Agency
Note

QC 20171128

Available from: 2017-11-28 Created: 2017-11-28 Last updated: 2018-01-08Bibliographically approved

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Visser, Dennis

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