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Unprecedented thermoelectric power factor in SiGe nanowires field-effect transistors
KTH, School of Engineering Sciences (SCI), Applied Physics. Linköping University, Sverige.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-9690-2292
KTH, School of Engineering Sciences (SCI), Applied Physics.
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2017 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 6, no 9, p. Q114-Q119Article in journal (Refereed) Published
Abstract [en]

In this work, a novel CMOS compatible process for Si-based materials has been presented to form SiGe nanowires (NWs) on SiGe On Insulator (SGOI) wafers with unprecedented thermoelectric (TE) power factor (PF). The TE properties of SiGe NWs were characterized in a back-gate configuration and a physical model was applied to explain the experimental data. The carrier transport in NWs was modified by biasing voltage to the gate at different temperatures. The PF of SiGe NWs was enhanced by a factor of >2 in comparison with bulk SiGe over the temperature range of 273 K to 450 K. This enhancement is mainly attributed to the energy filtering of carriers in SiGe NWs, which were introduced by imperfections and defects created during condensation process to form SiGe layer or in NWs during the processing of NWs.

Place, publisher, year, edition, pages
Electrochemical Society, 2017. Vol. 6, no 9, p. Q114-Q119
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Identifiers
URN: urn:nbn:se:kth:diva-218384DOI: 10.1149/2.0021710jssISI: 000418363500019Scopus ID: 2-s2.0-85033793013OAI: oai:DiVA.org:kth-218384DiVA, id: diva2:1160805
Funder
Swedish Foundation for Strategic Research , EM-011-0002Swedish Energy Agency, 43521-1Knut and Alice Wallenberg Foundation
Note

QC 20171128

Available from: 2017-11-28 Created: 2017-11-28 Last updated: 2018-01-08Bibliographically approved

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Noroozi, MohammadJayakumar, GaneshZahmatkesh, KatayounMensi, MounirErgül, AdemRadamson, Henry H.

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