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Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0001-6705-1660
2016 (English)In: Future Trends in Microelectronics: Journey into the Unknown, wiley , 2016, 51-67 p.Chapter in book (Other academic)
Abstract [en]

This chapter focuses primarily on sequential 3D, since only the high interconnection density achieved in this case is capable of supporting a scaling path in the vertical dimension. The successful implementation of a sequential 3D integration scheme requires a strong research effort in developing low-thermal-budget front-end of line (FEOL) processing. The chapter summarizes the status of current research in FEOL processing compatible with sequential 3D integration, as well as a view of the main outstanding challenges. It explores the possibility of integrating novel concepts based on 2D materials. In addition, sequential 3D integration has a strong impact not only at the device level but also at the system level, requiring the development of a 3D design ecosystem. In conclusion, one can observe that the technological foundation for sequential 3D integration is almost in place, since great progress has been made to develop low-thermal-budget processing and integration of novel materials. © 2016 by John Wiley & Sons, Inc. All rights reserved.

Place, publisher, year, edition, pages
wiley , 2016. 51-67 p.
Keyword [en]
2D materials, 3D design ecosystem, Front-end of line processing, Low-thermal-budget processing, Sequential 3D integration
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:kth:diva-216828DOI: 10.1002/9781119069225.ch1-4Scopus ID: 2-s2.0-85019920879ISBN: 9781119069225 (print)ISBN: 9781119069119 (print)OAI: oai:DiVA.org:kth-216828DiVA: diva2:1161533
Note

Export Date: 24 October 2017; Book Chapter; Correspondence Address: Östling, M.; School of Information and Communication Technology, KTH Royal Institute of TechnologySweden. QC 20171130

Available from: 2017-11-30 Created: 2017-11-30 Last updated: 2018-01-13Bibliographically approved

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Östling, MikaelHellström, Per-Erik

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